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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2907ADCSM DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 2.29 0.20 (0.09 0.008) 1.65 0.13 (0.065 0.005) 0.64 0.08 (0.025 0.003) 1.40 0.15 (0.055 0.006) * DUAL SILICON PLANAR EPITAXIAL PNP TRANSISTORS 4.32 0.13 (0.170 0.005) 2.54 0.13 (0.10 0.005) 2 1 3 4 5 * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS * SPACE QUALITY LEVELS OPTIONS * HIGH SPEED SATURATED SWITCHING A 6 0.23 rad. (0.009) 1.27 0.13 (0.05 0.005) 6.22 0.13 (0.245 0.005) A= LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 APPLICATIONS: Hermetically sealed dual surface mount version of the popular 2N2907A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD RqJA RqJC TSTG,Tj Semelab plc. PER SIDE Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Derate above 50C TOTAL DEVICE Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Storage Temperature, Operating temp range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk -60V -60V -5V 600mA 350mW 2.0mW / C 130C / W 60C / W -55 to 200C Prelim. 3/00 LAB ELECTRICAL CHARACTERISTICS PER SIDE (TC = 25C unless otherwise stated) Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* ICBO* IBEO VCE(sat)* VBE(sat)* Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Collector - Base Cut-off Current Base Cut-off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage SEME 2N2907ADCSM Test Conditions IC = 10mA IC = 10mA IE = 10mA VCE = 30V IE = 0 TC = 125C VCE = 30V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA VBE = 0.5V IB = 15mA IB = 50mA IB = 15mA IB = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V IC = 0 VBE = 0.5V VCB = 50V Min. -60 -60 -5 Typ. Max. Unit V V V 50 0.01 10 50 -0.4 -1.6 -1.3 -2.6 mA nA nA V V 75 100 100 100 50 300 -- hFE* DC Current Gain IC = 10mA IC = 150mA IC = 500mA * Pulse test tp = 300ms , d 2% DYNAMIC CHARACTERISTICS PER SIDE (TC = 25C unless otherwise stated) Parameter fT Cob Cib Transition Frequency Output Capacitance Input Capacitance Test Conditions IC = 50mA VCB = 10V VBE = 2V VCE = 20V IE = 0 IC = 0 f = 100MHz f = 1.0MHz f = 1.0MHz Min. 200 Typ. Max. Unit MHz 8 30 pF pF SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD) (TC = 25C unless otherwise stated) Parameter ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time Test Conditions VCC = 30V IC = 150mA IB1 = 15mA VCC = 6V IC = 150mA IB1 = IB2 = 15mA Min. Typ. 26 6.0 20 70 50 20 Max. Unit 45 10 40 100 80 30 ns ns Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 |
Price & Availability of 2N2907ADCSM
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